Boron Carbide (B4CB_{4}CB4C) Focus Rings in Plasma Etching

Boron carbide (B4CB_{4}CB4C) focus rings are emerging as next-generation consumable components in advanced semiconductor plasma etching systems. Replacing traditional quartz, silicon, and increasingly silicon carbide (SiC), B4CB_{4}CB4C offers exceptional hardness, plasma erosion resistance, and thermal stability, enabling longer service life and improved process consistency. Positioned around the wafer on the electrostatic chuck, focus rings shape the electric field and confine plasma at the wafer edge, ensuring uniform ion density and energy distribution. This minimizes edge effects, stabilizes critical dimensions (CD), and improves center-to-edge etch uniformity.

Compared with SiC, B4CB_{4}CB4C exhibits superior wear resistance and durability under aggressive plasma chemistries, allowing extended replacement cycles and reduced tool downtime. Its dense microstructure and favorable thermal properties further enhance etch stability. As device geometries continue to shrink, leading manufacturers—including Semixicon—are actively evaluating B4CB_{4}CB4C as a high-performance alternative to SiC for the most demanding etch processes.

Contact sales@semixicon.com for more details

#Boron Carbide  

#Focus Rings 

#Plasma Etching